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savantic semiconductor product specification silicon npn power transistors 2sC3170 d escription with to-220fa package low collector saturation voltage high breakdown voltge applications for high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 15 a t a =25 2 p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2sC3170 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a , l=25mh 400 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.6a 1.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.6a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =3a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 8 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c =3a ; i b1 =-i b2 =0.6a v cc =100v 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2sC3170 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)

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